| PART |
Description |
Maker |
| UPD4516161G5-A15-7JF UPD4516421G5-A15-7JF UPD45168 |
x4 SDRAM
x8 SDRAM
x16 SDRAM x16内存
|
Mitsubishi Electric, Corp.
|
| W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| UPD45256163G5-A10L-9JF UPD45256163G5-A10B-9JF UPD4 |
x16 SDRAM
|
NEC Electronics Inc
|
| HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT- |
DDR SDRAM - 256Mb
256M-P DDR SDRAM
IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC
|
Hynix Semiconductor
http://
|
| HY57V281620ALT-10 |
x16 SDRAM x16内存
|
Hynix Semiconductor, Inc.
|
| MT41J128M8 128M8 MT41J256M4 MT41J64M16 |
1Gb: x4, x8, x16 DDR3 SDRAM
|
Micon Design Technology Corporation
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYMD264646AL8-H HYMD264646AL8-K HYMD264646A8-H HYM |
Unbuffered DDR SDRAM DIMM
64Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|
| IBM13N8734HCB-260T IBM13N8734HCC-260T IBM13N8644HC |
x72 SDRAM Module
x64 SDRAM Module
8M x 64 One-Bank Unbuffered SDRAM Module(8M x 64 1组不带缓冲同步动态RAM模块) 8米64单银行无缓冲内存模组米64一组不带缓冲同步动态内存模块）
|
International Business Machines, Corp.
|
| HYB18T512161B2F-20 |
512-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
| W981616AH-8 W981616AH-7 |
x16 SDRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
x16 SDRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Winbond Electronics, Corp.
|
| K4X56163PG-FE K4X56163PG-FG |
16M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
